Structural characterization and effects of annealing on the electrical properties of stacked SiOxNy/Ta2O5 ultrathin films on strained-Si0.82Ge0.18 substrates

Journal of Physics D: Applied Physics

Volumn 36, Issue 7, 2003, Pages 901-907

  Chatterjee, S ^a   Samanta, S K ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; PERMITTIVITY; PLASMAS; STRAIN; STRUCTURE (COMPOSITION); SUBSTRATES; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

STRAINED LAYERS;

ULTRATHIN FILMS;

EID: 0037425172     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/7/320     Document Type: Article

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