Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4293-4296

  Nasyrov, K A ^a   Gritsenko, V A ^b   Novikov, Yu N ^b   Lee, E H ^c   Yoon, S Y ^c   Kim, C W ^c  

^a INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHARGE TRANSFER; CRYSTAL LATTICES; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TRAPS; ELECTRON TUNNELING; HIGH TEMPERATURE EFFECTS; HOLE TRAPS; IONIZATION; PERMITTIVITY; PHOTONS; QUANTUM THEORY;

ELECTRON INJECTION; MULTIPHOTON TRAP IONIZATION; OPTICAL ENERGY; PHOTON ENERGY;

SILICON NITRIDE;

EID: 7544226427     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790059     Document Type: Article

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