Ta2O5/silicon barrier height measured from MOSFETs fabricated with Ta2O5 gate dielectric

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 221-223

  Lai, Benjamin Chihming ^b   Yu, Jing Chi ^b   Lee, Joseph Ya Min ^a,b  

^a IEEE

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Barrier height; Hot carrier effects; MOSFET gate dielectric; Thermionic emission

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; HOT CARRIERS; IMPACT IONIZATION; SILICON WAFERS; TANTALUM COMPOUNDS; THERMIONIC EMISSION;

BARRIER HEIGHT; GATE DIELECTRIC;

MOSFET DEVICES;

EID: 0035337453     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919235     Document Type: Article

References (22)