Origin of the stress-induced leakage currents in Al-Ta2O 5/SiO2-Si structures

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Novkovski, N ^a   Atanassova, E ^b  

^a SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; LEAKAGE CURRENTS; SILICA; SILICON WAFERS; TANTALUM COMPOUNDS;

CURRENT STRESS; FRENKEL EFFECT; HOPPING CONDUCTION; SQUARE GATE CAPACITORS;

CAPACITORS;

EID: 20844432186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900955     Document Type: Article

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