N2 Annealing Effect on Thermal Ta2O5 Layers on Si Studied by XPS

Surface Science Spectra

Volumn 11, Issue 1, 2004, Pages 1-25

  Atanassova, E ^a   Tyuliev, G ^b   Paskaleva, A ^a   Spassov, D ^a   Kostov, K ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; SILICA; SILICON; TANTALUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING EFFECTS; AS-DEPOSITED FILMS; EXCESS SI; INTERFACIAL REGION; INTERFACIAL TRANSITION REGIONS; NITROGEN ANNEALING; STRUCTURAL CHARACTERISTICS; THERMAL; THICKNESS OF THE FILM; X-RAY PHOTOELECTRONS;

INTERFACES (MATERIALS);

EID: 85078594339     PISSN: 10555269     EISSN: 15208575     Source Type: Journal    
DOI: 10.1116/11.20040701     Document Type: Article

References (1)

1. E.Atanassova, G.Tyuliev, A.Paskaleva, D.Spassov, and K.Kostov, Appl. Surf. Sci. 225, 86 (2004). 10.1016/j.apsusc.2003.09.040