Oxygen vacancy defects in tantalum pentoxide: A density functional study

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 190-194

  Ramprasad, R ^a   Sadd, Michael ^b   Roberts, Doug ^b   Remmel, Tom ^a   Raymond, Mark ^b   Luckowski, Eric ^b   Kalpat, Sriram ^b   Barron, Carole ^b   Miller, Mel ^a  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Defect states; Density functional theory; Oxygen vacancy; Tantalum pentoxide; Trap states

Indexed keywords

FERMI LEVEL; OXYGEN; PROBABILITY DENSITY FUNCTION; TANTALUM COMPOUNDS;

DEFECT STATES;

MICROELECTRONICS;

EID: 0141792822     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00296-X     Document Type: Conference Paper

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