Semiconductor surface and interface passivation by cyanide treatment

Applied Surface Science

Volumn 235, Issue 3, 2004, Pages 279-292

  Kobayashi, H ^a,b   Takahashi, M ^a,b   Maida, O ^a,b   Asano, A ^a,b   Kubota, T ^a,b   Ivanco J ^a,b   Nakajima, A ^c   Akimoto, K ^b,d  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KANEKA CORPORATION   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Cu 2 O; Cyanide treatment; Defect states; Interface states; MOS; Si; Silicon oxide; Solar cells

Indexed keywords

CHEMICAL BONDS; CYANIDES; DEFECTS; INTERFACES (MATERIALS); PASSIVATION; PHOTOLUMINESCENCE; SOLAR CELLS; SOLUBILITY; SURFACE CHEMISTRY; VELOCITY MEASUREMENT;

CYANIDE TREATMENT; DEFECT STATES; INTERFACE STATES; MOS; SILICON OXIDE;

SEMICONDUCTOR MATERIALS;

EID: 4243130547     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.101     Document Type: Conference Paper

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