Passivation of defect states in amorphous and crystalline Si by use of cyanide treatment and improvement of solar cell characteristics

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 441-452

  Kobayashi, Hikaru ^a   Fujiwara, Naozumi ^a   Fujinaga, Tetsushi ^a   Niinobe, Daisuke ^a   Maida, Osamu ^a   Takahashi, Masao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; CYANIDES; DENSITY (OPTICAL); SOLUTIONS;

CROWN ETHER CYANIDE TREATMENT; CRYSTALLINE SILICON; DARK CURRENT DENSITIES;

AMORPHOUS SILICON;

EID: 0036915062     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a11.5     Document Type: Conference Paper

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