Chemical prevention of light-induced degradation in amorphous silicon films

Solid State Communications

Volumn 123, Issue 3-4, 2002, Pages 151-154

  Kobayashi, Hikaru ^a,b   Kasama, Yoshiko ^a,b   Fujinaga, Tetsushi ^a,b   Takahashi, Masao ^a,b   Koinuma, Hideomi ^c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. Amorphous Si; A. Thin films; D. Photoconductivity and photovoltaics; D. Recombination and trapping

Indexed keywords

AMORPHOUS SILICON; CROWN ETHERS; DEFECTS; INCLUSIONS; PHOTOCONDUCTIVITY; PHOTODEGRADATION; POSITIVE IONS; SOLAR CELLS;

CHEMICAL PREVENTION;

AMORPHOUS FILMS;

EID: 0036646963     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00216-8     Document Type: Article

References (20)

1. Strengths of chemical bounds