Monte Carlo stress engineering of scaled (110) and (100) Bulk pMOSFETs

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 369-371

  Bufler, F M ^a,b   Gautschi, R ^b,c   Erlebach, A ^b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c Netbreeze GmbH   (Switzerland)

Author keywords

(110) Surface; Enhanced mobility; Monte Carlo (MC) device simulation; PMOS; Stress engineering

Indexed keywords

COMPRESSIVE STRESS; COMPUTER SIMULATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS;

CAP LINER; ENHANCED MOBILITY; STRESS ENGINEERING; SURFACE ORIENTATION;

MOSFET DEVICES;

EID: 41749106674     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917633     Document Type: Article

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