Dual Substrate Orientation integration for high performance (110) PMOS

ECS Transactions

Volumn 3, Issue 2, 2006, Pages 363-369

  Karve, G ^a   White, T ^a   Eades, D ^a   Sadaka, M ^b   Spencer, G ^a   Hackenberg, J ^a   Norbert, J ^a   Kropewnicki, T ^a   Zollner, S ^a   Beckage, P ^c   Grant, J ^a   Garcia, R ^a   Lin, C T ^d   Wu, I Lu ^d   Cave, N ^a   Nguyen, B Y ^a   Hall, M ^a   Cheek, J ^a   Venkatesan, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b ColdWatt ^*  (United States)

^c Submicron Development Center   (United States)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; HOLE MOBILITY; MOSFET DEVICES; SEMICONDUCTING SILICON;

CHANNEL STRESS; DRIVE CURRENT ANISOTROPY; DUAL SUBSTRATE ORIENTATION (DSO); NMOS TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 33846987967     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356296     Document Type: Conference Paper

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