Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2058-2062

  Trojman, L ^a,b   Pantisano, L ^a   Severi, S ^a   San Andres, E ^c   Hoffman, T ^a   Ferain, I ^a   De Gendt, S ^a,b   Heyns, M ^a,b   Maes, H ^a,b   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

High ; Mobility and performance; Short channel devices; Si Substrate orientation

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; PERMITTIVITY;

PERFORMANCE IMPROVEMENTS; SERIES RESISTANCE; SHORT CHANNEL DEVICES; SILICON-SUBSTRATE ORIENTATION;

MOSFET DEVICES;

EID: 34248661853     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.090     Document Type: Article

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