Nonlinear piezoresistance effect in devices with stressed etch stop liner

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 113-116

  Bach, K H ^a   Liebmann, R ^a   Nawaz, M ^a   Jungemann, C ^b   Ungersboeck, E ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION;

DEVICE PERFORMANCE; EMPIRICAL PSEUDOPOTENTIAL METHOD; FULL BAND STRUCTURES; LAYOUT DEPENDENTS; MOBILITY ENHANCEMENT; OUT-OF-PLANE DIRECTION; PIEZORESISTANCE EFFECTS; STRAIN COMPONENTS;

SEMICONDUCTOR DEVICES;

EID: 41749105319     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_27     Document Type: Conference Paper

References (5)

1. K. Goto et al., "Technology booster using strain-enhancing laminated SiN (SELS) for 65nm node HP MPUs", IEDM Tech. Dig., pp. 209-212. December 2004.
2. K. V. Loiko et al., "Multi-layer model for stressor film deposition". SISPAD 06, session 6.2, Sept. 2006.
3. R. Liebmann, M. Nawaz, K. H. Bach, "Efficient 2D approximation for layout-dependent relaxation of etch stop liner stress due to contact holes", SISPAD 06, poster session, Sept 2006.
4. E. Ungershoeck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr, "Physical modeling of electron mobility enhancement for arbitrarily strained silicon", J. Comput. Electronics, Vol. 6, pp. 55-58, 2007.
5. C. S. Smith, "Piezoresistance effect in germanium and silicon", Phys. Rev., Vol. 94, pp. 42-49, 1954,