Analysis of nano-scale MOSFET including uniaxial and biaxial strain

Journal of Computational Electronics

Volumn 6, Issue 1-3, 2007, Pages 49-53

  Tanabe, Ryo ^a   Yamasaki, Takahiro ^a   Ashizawa, Yoshio ^a   Oka, Hideki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Ballistic transport; Biaxial; Monte Carlo; Pseudo potential; Scaling; Si; Strain; Uniaxial

Indexed keywords

AXIAL COMPRESSION; BAND STRUCTURE; COMPUTER SIMULATION; MONTE CARLO METHODS; NANOELECTRONICS; SEMICONDUCTING SILICON; TENSILE STRAIN;

BALLISTIC TRANSPORT; BIAXIAL STRAIN; PSEUDO-POTENTIAL; UNIAXIAL STRAIN;

MOSFET DEVICES;

EID: 34247362303     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0050-5     Document Type: Article

References (6)

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