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Volumn 5, Issue 4, 2006, Pages 467-469

On a simple and accurate quantum correction for Monte Carlo simulation

Author keywords

Monte Carlo device simulation; Quantum correction; TCAD

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MONTE CARLO METHODS; MOSFET DEVICES;

EID: 34248630491     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0038-1     Document Type: Article
Times cited : (7)

References (10)
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  • 2
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    • Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
    • Jungemann, C. et al.: Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers. Solid-State Electron. 36, 1529 (1993)
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  • 3
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    • On the enhanced electron mobility in strained-silicon inversion layers
    • Fischetti, M.V. et al.: On the enhanced electron mobility in strained-silicon inversion layers. J. Appl. Phys. 92, 7320 (2002)
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  • 4
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    • Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential
    • Ramey, S.M., Ferry, D.K.: Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential. IEEE Trans. Nanotechnol. 2, 110 (2003)
    • (2003) IEEE Trans. Nanotechnol. , vol.2 , pp. 110
    • Ramey, S.M.1    Ferry, D.K.2
  • 5
    • 33751425381 scopus 로고    scopus 로고
    • A semiempirical surface scattering model for quantum corrected Monte Carlo simulation of strained Si-nMOSFETs
    • Pham, A.T. et al.: A semiempirical surface scattering model for quantum corrected Monte Carlo simulation of strained Si-nMOSFETs. In: Proceedings of the ESSDERC, pp. 293-296 (2005)
    • (2005) Proceedings of the ESSDERC , pp. 293-296
    • Pham, A.T.1
  • 6
    • 2942672642 scopus 로고    scopus 로고
    • MC simulation of strained-Si MOSFET with full-band structure and quantum correction
    • Fan, X.-F. et al.: MC simulation of strained-Si MOSFET with full-band structure and quantum correction. IEEE Trans. Electron Devices 51, 962 (2004)
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    • Fan, X.-F.1
  • 7
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    • A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n -MOSFET's
    • Sangiorgi, E., Pinto, M.R.: A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n -MOSFET's. IEEE Trans. Electron Devices 39, 356 (1992)
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 356
    • Sangiorgi, E.1    Pinto, M.R.2
  • 8
    • 84908209696 scopus 로고    scopus 로고
    • Full band Monte Carlo device simulation of 0.1-0.5 μm strained-Si p-MOSFETs
    • Keith, S. et al.: Full band Monte Carlo device simulation of 0.1-0.5 μm strained-Si p-MOSFETs. In: Proceedings of the ESSDERC, pp. 312-315 (1998)
    • (1998) Proceedings of the ESSDERC , pp. 312-315
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  • 9
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    • Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
    • Currie, M.T. et al.: Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates. J. Vac. Sci. Technol. B 19, 2268 (2001)
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  • 10
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    • A simple approach to account for the impact of quantum confinement on the charge in semiclassical Monte Carlo simulations of bulk nMOSFETs
    • Hudé, R. et al.: A simple approach to account for the impact of quantum confinement on the charge in semiclassical Monte Carlo simulations of bulk nMOSFETs. In: Proceedings of the ULIS, pp. 159-162 (2005)
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    • Hudé, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.