Very high carrier mobility for high-performance CMOS on a Si(110) surface

IEEE Transactions on Electron Devices

Volumn 54, Issue 6, 2007, Pages 1438-1445

  Teramoto, Akinobu ^a   Hamada, Tatsufumi ^a   Yamamoto, Masashi ^a,b   Gaubert, Philippe ^a   Akahori, Hiroshi ^a,c   Nii, Keiichi ^a,b   Hirayama, Masaki ^a   Arima, Kenta ^d   Endo, Katsuyoshi ^d   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Stella Chemifa Co Ltd   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Channel; Cleaning; CMOS; Flicker; Mobility; MOSFET; Noise; roughness; Surface orientation

Indexed keywords

CARRIER MOBILITY; MIXER CIRCUITS; MOSFET DEVICES; OXIDATION; SURFACE CLEANING; SURFACE ROUGHNESS;

HIGH-TEMPERATURE WET OXIDATION; LOW-FLICKER-NOISE P-CHANNEL MOSFET; RADICAL OXIDATION; SURFACE FLATTENING PROCESSES;

CMOS INTEGRATED CIRCUITS;

EID: 34249904923     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.896372     Document Type: Article

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