Scaling of bulk pMOSFETs: (110) surface orientation versus uniaxial compressive stress

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 992-994

  Bufler, F M ^a,b   Tsibizov, A ^b   Erlebach, A ^b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

(110) surface; Enhanced mobility; Monte Carlo device simulation; PMOS; Strained silicon

Indexed keywords

COMPRESSIVE STRESS; COMPUTER SIMULATION; DRAIN CURRENT; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING SILICON; SURFACE PROPERTIES;

GATE LENGTHS; MONTE CARLO DEVICE SIMULATION; STRAINED SILICON; SURFACE ORIENTATION; UNIAXIAL COMPRESSIVE STRESS;

MOSFET DEVICES;

EID: 33947201547     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886706     Document Type: Article

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