3D stress, process and device simulation: Extraction of the relevant stress tensor

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 117-120

  Bufler, F M ^a,b   Sponton, L ^a   Gautschi, R ^b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES; TENSORS;

CONSTANT STRESS; DEVICE SIMULATIONS; DRIFT-DIFFUSION SIMULATION; MONTE CARLO DEVICE SIMULATIONS; PIEZORESISTANCE MODELS; POSITION DEPENDENCE; SATURATION CURRENT; THREEDIMENSIONAL (3-D);

MONTE CARLO METHODS;

EID: 41749125010     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_28     Document Type: Conference Paper

References (5)

1. M. Horstmann, A. Wei, T. Kammler, J. Höntschel, H. Bierstedt, T. Feudel, K. Frohberg, M. Gerhardt, A. Hellmich, K. Hempel, J. Hohage, P. Javorka, J. Klais, G. Koerner, M. Lenski, A. Neu, R. Otterbach, P. P. and C. Reichel, M. Trentsch, B. Trui, H. Salz, M. Schaller, J.-J. Engelmann, O. Herzog, H. Ruelke, p. Hübler, R. Stephan, D. Greenlaw, M. Raab, N. Kepler, H. Chen, D. Chidambarrao, D. Fried, J. Holt, W. Lee, H. Niî, S. Panda, T. Satô, A. Waite, S. Luning, K. Rim, D. Schepis, M. Khare, S. F. Huang, J. Pellerin, and L. T. Su, "Integration and optimization of embedded-SiGe, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies," in IEDM Tech. Dig., 2005, pp. 243-246.
2. F. M. Bufler and R. Gautschi, "On the influence of the position-dependence of stress on device performance," ECS Transactions, Vol. 3, no. 7, pp. 439-442, 2006.
3. C. S. Smith, "Piezoresistance effect in germanium and silicon," Phys. Rev., Vol. 94, pp. 42-49, 1954.
4. Synopsys Inc., "Sentaurus Process User's Manual," Release Z-2007.03, 2007.
5. K. V. Loiko, V. Adams, D. Tekleab, B. Winstead, X.-Z. Bo, P. Grudowski, S. Goktepeli, S. Filipiak, B. Goolsby, V. Kolagunta, and M. C. Foisy, "Mulit-layer model for stressor film deposition," in Proc. SISPAD, Monterey (U.S.A.), Sept. 2006, pp. 123-126.