On the influence of the position-dependence of stress on device performance

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 439-442

  Bufler, F M ^a,b   Gautschi, R ^b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HOLE MOBILITY; HYDRODYNAMICS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS;

DRAIN CURRENT; MECHANICAL SIMULATIONS; PIEZORESISTANCE;

MOSFET DEVICES;

EID: 33846954422     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355841     Document Type: Conference Paper

References (8)

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7. F. M. Bufler et al., IEEE Trans. Electron Devices, 50, 418 (2003).
8. F. M. Bufler and W. Fichtner, IEEE Trans. Electron Devices, 50, 278 (2003).