Nanoparticle formation in 25-nm-SiO2 thin layer by germanium negative-ion implantation and its capacitance-voltage characteristics

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 94-98

  Tsuji, Hiroshi ^a   Arai, Nobutoshi ^a,b   Gotoh, Naoyuki ^a   Minotani, Takashi ^a   Kojima, Kenji ^a   Adachi, Kouichiro ^b   Kotaki, Hiroshi ^b   Ishibashi, Toyotsugu ^a   Gotoh, Yasuhito ^a   Ishikawa, Junzo ^a  

^a KYOTO UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Capacitance voltage characteristics; Ion implantation; Nanoparticle; Negative ion beam

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; NANOPARTICLES;

ANNEALING TEMPERATURE; CAPACITANCE-VOLTAGE CHARACTERISTICS; GERMANIUM NANOPARTICLES; NEGATIVE-ION BEAMS;

SILICA;

EID: 33947669281     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.156     Document Type: Article

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