Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4440-4448

  Nazarov, A N ^a,b,c   Gebel, T ^a,b   Rebohle, L ^a,b   Skorupa, W ^a,b   Osiyuk, I N ^c   Lysenko, V S ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; PARTICLE BEAM INJECTION; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA;

TRAP CREATION (TC) MECHANISMS;

ION IMPLANTATION;

EID: 0142025616     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1604934     Document Type: Article

References (28)

1. J. Y. Zhang, X. L. Wu, and X. M Bao, Appl. Phys. Lett. 71, 2505 (1997).
2. L. Rebohle, J. von Borany, R. A. Yankov, W. Skorupa, I. E. Tyschenko, H. Fröb, and K. Leo, Appl. Phys. Lett. 71, 2809 (1997).
3. L. Rebohle, J. von Borany, H. Fröb, and W. Skorupa, Appl. Phys. B: Lasers Opt. 71, 13 (2000).
4. L. Rebohle, J. von Borany, D. Borchert, H. Fröb, T. Gebel, M. Helm, W. Möller, and W. Skorupa, Electrochem. Solid-State Lett. 4, 057 (2001).
5. D. J. DiMaria, D. R. Young, R. F. DeKeersmaecker, W. R. Hunter, and C. M. Serrano, J. Appl. Phys. 49, 5441 (1978).
6. 2 and its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), p. 160.
7. B. J. Mrstik, H. L. Hughes, P. J. McMarr, R. K. Lawrence, D. I. Ma, I. P. Isaaeson, and R. A. Walker, IEEE Trans. Nucl. Sci. 47, 2189 (2000).
8. C. J. Nicklaw, M. P. Pagey, S. T. Pantelides, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, J. E. Witting, B. M. Howard, E. Taw, W. H. McNeil, and J. F. Conley, IEEE Trans. Nucl. Sci. 47, 2269 (2000).
9. T. Gebel, L. Rebohle, W. Skorupa, A. N. Nazarov, I. N. Osiyuk, and V. S. Lysenko, Appl. Phys. Lett. 81, 2575 (2002).
10. M. V. Fischetti, J. Appl. Phys. 57, 2860 (1985).
11. P. Samanta and C. K. Sarkur, Solid-State Electron. 41, 459 (1997).
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., (Wiley, New York, 1981).
13. P. Solomon, J. Appl. Phys. 48, 3843 (1977).
14. A. N. Nazarov, V. I. Kilchitska, and I. P. Barchuk, in Progress in SOI Structures and Devices Operating at Extreme Conditions, edited by F. Balestra, A. N. Nazarov, and V. S. Lysenko (Kluwer, Dordrecht 2002), p. 139.
15. V. V. Afanas'ev and V. K. Adamchuk, Prog. Surf. Sci. 47, 301 (1994).
16. D. J. DiMaria and J. W. Stasiac, J. Appl. Phys. 65, 2342 (1989).
17. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
18. D. A. Buchanan, A. D. Marwick, D. J. DiMaria, and L. Dori, J. Appl. Phys. 76, 3595 (1994).
19. N. Klein and P. Solomon, J. Appl. Phys. 47, 4364 (1976).
20. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. 58, 2252 (1985).
21. D. J. DiMaria, E. Cartier, and D. A. Buchanan, J. Appl. Phys. 80, 304 (1996).
22. M. V. Fischetti, Phys. Rev. B 31, 2099 (1985).
23. R. A. B. Devine, IEEE Trans. Nucl. Sci. 41, 452 (1999).
24. D. J. DiMaria, Solid-State Electron. 41, 957 (1999).
25. D. Arnold and D. J. DiMaria, Phys. Rev. B 49, 10278 (1994).
26. T. Gebel, Dr. thesis, Technische Universität Dresden, 2002 (In English!).
27. T. Uchinp, M. Takahashi, and T. Yoko, Appl. Phys. Lett. 79, 359 (2001).
28. W. L. Warren, K. Simmons-Potter, B. G. Potter, Jr., and J. A. Ruffner, Appl. Phys. Lett. 69, 1453 (1996).