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Volumn 148, Issue 1-4, 1999, Pages 969-974
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Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers
b
IFW DRESDEN
(Germany)
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Author keywords
Annealing; Germanium; Ion beam synthesis; Modeling; Oxidation; Silicon dioxide
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Indexed keywords
ANNEALING;
ION BEAMS;
ION IMPLANTATION;
MONTE CARLO METHODS;
NANOSTRUCTURED MATERIALS;
OXIDATION;
PRECIPITATION (CHEMICAL);
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING GERMANIUM;
SILICA;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY CRYSTALLOGRAPHY;
ION-BEAM SYNTHESIS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033513861
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(98)00862-3 Document Type: Article |
Times cited : (121)
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References (16)
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