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Volumn 148, Issue 1-4, 1999, Pages 969-974

Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers

Author keywords

Annealing; Germanium; Ion beam synthesis; Modeling; Oxidation; Silicon dioxide

Indexed keywords

ANNEALING; ION BEAMS; ION IMPLANTATION; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; OXIDATION; PRECIPITATION (CHEMICAL); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

EID: 0033513861     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00862-3     Document Type: Article
Times cited : (121)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.