Evolution and control of the structure of a SiO2/semiconductor nanoelectronics material

Microelectronic Engineering

Volumn 61, Issue 62, 2002, Pages 631-635

  Beltsios, K ^a,b   Normand, P ^c   Kapetanakis, E ^c   Tsoukalas, D ^c   Travlos, A ^d  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

^c INSTITUTE OF MICROELECTRONICS   (Greece)

^d INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

Electron irradiation; Glass transition; Nanocrystals; Nanolayer; Phase separation; Silica

Indexed keywords

SILICA NANOLAYERS;

ELECTRON IRRADIATION; FABRICATION; GLASS TRANSITION; PHASE SEPARATION; PHASE TRANSITIONS; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 17344394743     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00467-7     Document Type: Article

References (8)