Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 74-77

  Normand, P ^a   Beltsios, K ^a   Kapetanakis, E ^a   Tsoukalas, D ^a   Travlos, T ^a   Stoemenos, J ^b   Van Den Berg, J ^c   Zhang, S ^c   Vieu, C ^d   Launois, H ^d   Gautier, J ^e   Jourdan, F ^e   Palun, L ^e  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITY OF SALFORD   (United Kingdom)

^d CNRS   (France)

^e CEA LETI   (France)

Author keywords

Ge; Glass transition; Implantation; Nanocrystals; Si; SiO2

Indexed keywords

ANNEALING; GLASS TRANSITION; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

SEMICONDUCTOR NANOCRYSTALS; SEMICONDUCTOR-RICH NANOLAYERS;

SEMICONDUCTING FILMS;

EID: 0035334859     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00495-5     Document Type: Conference Paper

References (5)