Band-gap narrowing and high-frequency characteristics of si/gexsi1-x heterojunction bipolar transistors formed by ge ion implantation in si

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1531-1537

  Lombardo, Salvatore A ^a   Privitera, Vittorio ^a   Pinto, Angelo ^a   Ward, Peter ^a   Rosa, Gregorio La ^a   Campisano, Salvatore U ^a  

^a CNR   (Italy)

Author keywords

Heterojunction bipolar transistors; Ion implantation; Silicon materials

Indexed keywords

FABRICATION; HETEROJUNCTIONS; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

BAND-GAP NARROWING;

BIPOLAR TRANSISTORS;

EID: 0032122649     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701485     Document Type: Article

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