Charge trapping and degradation in high-permittivity TiO2 dielectric films

IEEE Electron Device Letters

Volumn 18, Issue 10, 1997, Pages 465-467

  Kim, Hyeon Seag ^a   Campbell, S A ^a   Gilmer, D C ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ENERGY GAP; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE MEASUREMENTS; FOWLER-NORDHEIM CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR PARAMETER ANALYZER; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOSFET DEVICES;

EID: 0031256909     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.624911     Document Type: Article

References (12)

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