Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

Journal of Physics Condensed Matter

Volumn 16, Issue 31, 2004, Pages

  Misiewicz, J ^a   Kudrawiec, R ^a   Ryczko, K ^a   Sek G ^a   Forchel, A ^b   Harmand, J C ^c   Hammar, M ^d  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c CNRS   (France)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSION (WAVES); ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; LASER BEAMS; LOW TEMPERATURE EFFECTS; OPTICAL FIBERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN;

ELECTRON EFFECTIVE MASS; PHOTOMODULATION; PHOTOREFLECTANCE SPECTROSCOPY; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 4043176238     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/31/006     Document Type: Article

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