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Journal of Crystal Growth

Volumn 241, Issue 1-2, 2002, Pages 31-38

Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

(8) Pavelescu, E M a,b Jouhti, T a Peng, C S a Li, W a Konttinen, J a Dumitrescu, M c Laukkanen, P d Pessa, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

b VALAHIA UNIVERSITY OF TARGOVISTE (Romania)

c MEMSCAP (Finland)

d Universität Turku (Finland)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; B2. Semiconducting quaternary alloys

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; STRAIN;

SEMICONDUCTING QUATERNARY ALLOYS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036566532 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01133-8 Document Type: Article

Times cited : (21)

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