GaAsSbN: a new low-bandgap material for GaAs substrates

Electronics Letters

Volumn 35, Issue 15, 1999, Pages 1246-1248

  Ungaro, G ^a   Le Roux, G ^a   Teissier, R ^a   Harmand, J C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LIGHT SOURCES; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

LASER SOURCES; NITROGEN PLASMA SOURCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032679917     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990864     Document Type: Article

References (8)

1. KONDOW, M., NATATSUKA, S., KITATANI, T., YAZAWA, Y., and OKAI, M.: '1.3μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, (4), pp. 487-488
2. FRIEDMAN, D.J., GEISZ, J.F., KURTZ, S.R., and OLSON, J.M.: '1-eV solar cell with GaInNAs active layer', J. Cryst. Growth, 1998, 195, pp. 409-415
3. GOKHALE, WEI, J.K., WANG, H., and FORREST, S.R.: 'Growth and characterisation of small band gap (0.6eV) InGaAsN layers on InP', Appl. Phys. Lett., 1999, 74, (9), pp. 1287-1289
4. NAKATSUKA, S., KONDOW, M., KITATANI, T., YAZAWA, Y., and OKAI, M.: 'Index-guide GaInNAs laser diode for optical communications', J. Appl. Phys., 1998, 37, pp. 1380-1382
5. SAITO, H., MAKIMOTO, T., and KOBAYASHI, N.: 'MOVPE growth of strained InGaAsN/GaAs quantum wells', J. Cryst. Growth, 1998, 195, pp. 416-420
6. FRIEDMAN, D.J., GEISZ, J.F., KURTZ, S.R., and OLSON, J.M.: 'Nonlinear dependence of N incorporation of In content in GaInNAs', J. Cryst. Growth, 1998, 195, pp. 438-443
7. x/GaAs strained-layer multiple quantum wells grown by molecular beam epitaxy', Phys. Rev. B, 1988, 38, (15), pp. 10571-10577
8. x layers: influence of post-growth treatments', Appl. Phys. Lett., 1998, 72, (12), pp. 1409-1411