Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers

Solid State Communications

Volumn 129, Issue 6, 2004, Pages 353-357

  Kudrawiec, R ^a   Sek, G ^a   Misiewicz, J ^a   Li, L H ^b   Harmand, J C ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b CNRS   (France)

Author keywords

A. GaAsN; A. GaInNAs; E. Photoreflectance

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; NITROGEN; OPTOELECTRONIC DEVICES; RESONANCE; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BAND ANTICROSSING (BAC) MODEL; CONDUCTION STATES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0346334031     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.11.004     Document Type: Article

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