Optical properties of GaInNas/Gaas quantum wells: Character of optical transitions and carrier localisation effect

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 2, 2004, Pages 364-367

  Kudrawiec, R ^a   Misiewicz, J ^a   Fisher, M ^b   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GROUND STATE; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS; DEGRADATION; EXCITONS; SEMICONDUCTOR DOPING;

PHOTOREFLECTANCE (PR); SINGLE QUANTUM WELLS (SQW);

SEMICONDUCTOR QUANTUM WELLS;

CARRIER LOCALIZATION; OPTICAL TRANSITIONS; PHOTOLUMINESCENCE (PL) SPECTROSCOPY; STOKES SHIFT;

EID: 1242310329     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303963     Document Type: Conference Paper

References (22)

1. M. Kondow, K. Uomi, A. Niwa, T. Kikatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys. 35 (2B), 1273 (1996).
2. K. Kim and A. Zunger, Phys. Rev. Lett. 86, 2609 (2001).
3. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly, Phys. Rev. B 64, 121203(R) (2001).
4. R. Kudrawiec, G. Sek, K. Ryczko, J. Misiewicz, P. Sundgren, C. Asplund, and M. Hammar, Solid State Commun. 127, 613 (2003).
5. M. Fisher, D. Gollub, M. Reinhardt, M. Kamp, and A. Forchel, J. Cryst. Growth 251, 353 (2003).
6. J. Misiewicz, P. Sitarek, G. Sek, and R. Kudrawiec, Materials Science 21, 263 (2003).
7. J. Misiewicz, P. Sitarek, K. Ryczko, R. Kudrawiec, M. Fischer, M. Reinhardt, and A. Forchel, Microelectron. J. 34, 737 (2003).
8. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys. 31, Part 2, L853 (1992).
9. J.-Y. Duboz, J. A. Gupta, Z. R. Wasilewski, J. Ramsey, R. L. Williams, G. C. Aers, B. J. Riel, and G. I. Sproule, Phys. Rev. B 66, 085313 (2002).
10. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Krutz, Phys. Rev. Lett. 82, 1221 (1999).
11. M. Hetterich, A. Grau, A. Yu. Egorov, and H. Riechert, J. Appl. Phys. 94, 1810 (2003).
12. R. Kudrawiec, G. Sek, J. Misiewicz, L. H. Li, and J. C. Harmand, Appl. Phys. Lett. 83, 1379 (2003).
13. R. Kudrawiec, G. Sek, J. Misiewicz, D. Gollub, and A. Forchel, Appl. Phys. Lett. 83, 2772 (2003).
14. M. Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, and A. Forchel, Appl. Phys. Lett. 83, 470 (2003).
15. O. J. Glembocki, Proc. SPIE 1286, 2 (1990).
16. D. E. Aspnes, Surface Sci. 37, 418 (1973).
17. G. Sȩk, K. Ryczko, J. Misiewicz, M. Fischer, and A. Forchel, Thin Solid Films 380, 240 (2000).
18. T. Matsuoka, T. Sasaki, and A. Katsui, Optoelectron. Devices Technol. 5, 53 (1990).
19. K. Jezierski P. Markiewicz, J. Misiewicz, M. Panek, B. Ściana, R. Korbutowicz, and M. Tłaczała, J. Appl. Phys. 77, 4139 (1995).
20. B. Q. Sun, M. Gal, Q. Gao, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 81, 4368 (2002).
21. I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, B. Monemar, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 75, 501 (1999).
22. I. A. Buyanova, W. M. Chen, B. Monemar, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 75, 3781 (1999).