Properties of 1.3 μ m InGaNAs laser material grown by MBE using a N2/Ar RF plasma

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 399-405

  Gupta, J A ^a   Barrios, P J ^a   Aers, G C ^a   Williams, R L ^a   Ramsey, J ^a   Wasilewski, Z R ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

GaInNAs; InGaNAs; Laser diodes; XRD

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; PLASMAS; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

QUANTUM CONFINEMENT;

QUANTUM WELL LASERS;

EID: 0037347011     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00379-9     Document Type: Conference Paper

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