Mechanism of nonideality in nearly ideal Si Schottky barriers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 268-274

  Maeda, Keiji ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON MICROSCOPY; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); IONIZATION; POINT DEFECTS; SEMICONDUCTING SILICON;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); NONIDEALITY ANALYSIS; SCHOTTKY BARRIER HEIGHTS (SBH);

SCHOTTKY BARRIER DIODES;

EID: 0035078596     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1343101     Document Type: Article

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