Some comments on the determination and interpretation of barrier heights of metal-semiconductor contacts

Applied Physics A: Materials Science and Processing

Volumn 87, Issue 3, 2007, Pages 359-366

  Monch W ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FERMI LEVEL; RADIATION DAMAGE;

INTERFACE-INDUCED GAP STATES; SEMICONDUCTOR INTERFACES; STABILIZATION ENERGY;

METAL INSULATOR BOUNDARIES;

EID: 33947278312     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-3925-9     Document Type: Article

References (46)

1. V. Heine, Phys. Rev. 138, A1689 (1965)
2. C. Tejedor, F. Flores, J. Phys. C 11, L19 (1978)
3. W. Mönch, Electronic Properties of Semiconductor Interfaces (Springer, Berlin, 2004)
4. H. Vázquez, R. Oszwaldowski, P. Pou, J. Ortega, R. Pérez, F. Flores, A. Kahn, Europhys. Lett. 65, 802 (2004)
5. H. Vázquez, F. Flores, R. Oszwaldowski, J. Ortega, R. Pérez, A. Kahn, Appl. Surf. Sci. 234, 107 (2004)
6. W. Mönch, Appl. Phys. Lett. 88, 112 116 (2006)
7. N.F. Mott, Proc. Camb. Philos. Soc. 34, 568 (1938)
8. W. Schottky, Z. Physik 41, 570 (1940)
9. W. Walukiewicz, Phys. Rev. B 37, 4760 (1988)
10. J. Bardeen, Phys. Rev. 71, 717 (1947)
11. W. Walukiewicz, Physica B 302-303, 123 (2001)
12. J.C. Inkson, J. Phys. Solid State 13, 369 (1980)
13. R. Schmitsdorf, T.U. Kampen, W. Mönch, Surf. Sci. 324, 249 (1995)
14. J.L. Freeouf, T.N. Jackson, S.E. Laux, J.M. Woodall, Appl. Phys. Lett. 40, 634 (1982)
15. I. Ohdomari, K.N. Tu, F.M. d'Heurle, T.S. Kuan, S. Petersson, Appl. Phys. Lett. 33, 1028 (1978)
16. P. Werner, W. Jäger, A. Schüppen, J. Appl. Phys. 74, 3846 (1993)
17. K. Maeda, E. Kitahara, Appl. Surf. Sci. 130, 925 (1998)
18. J.C. Ousset, J. Leotin, S. Askenazy, M.S. Skolnick, R.A. Stradling, J. Phys. C 9, 2803 (1976)
19. R.T. Tung, Phys. Rev. B 45, 13509 (1992)
20. L.N. Pauling, The Nature of the Chemical Bond (Cornell Univ., Ithaca, NY, 1939)
21. S.B. Zhang, M.L. Cohen, S.G. Louie, Phys. Rev. B 34, 768 (1986)
22. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984)
23. J. Tersoff, J. Vac. Sci. Technol. B 4, 1066 (1986)
24. W. Mönch, J. Appl. Phys. 80, 5076 (1996)
25. A. Baldereschi, Phys. Rev. B 7, 5212 (1973)
26. D.R. Penn, Phys. Rev. 128, 2093 (1962)
27. W. Mönch, Appl. Phys. Lett. 86, 162 101 (2005)
28. W. Mönch, Appl. Phys. Lett. 86, 122 101 (2005)
29. A.M. Cowley, S.M. Sze, J. Appl. Phys. 36, 3212 (1965)
30. W. Mönch, Appl. Surf. Sci. 92, 367 (1996)
31. A.R. Miedema, F.R. de Boer, P.F. de Châtel, J. Phys. F 3, 1558 (1973)
32. A.R. Miedema, P.F. de Châtel, F.R. de Boer, Physica B 100, 1 (1980)
33. R.T. Tung, J. Vac. Sci. Technol. B 2, 465 (1984)
34. R.T. Tung, A.F.J. Levi, J.M. Gibson, K.K. Ng. A. Chantre, Mater. Res. Soc. Symp. Proc. 54, 458 (1986)
35. Z.J. Horváth, G. Molnár, B. Kovács, G. Petö, M. Andrási, B. Szentpáli, J. Cryst. Growth 126, 163 (1993)
36. Z.J. Horváth, private communication (1999)
37. V.I. Kuznetsov, T.A. Logvinenko, P.I. Lugakov, V.P. Tkachev, Sov. Phys. Semicond. 9, 491 (1975)
38. A.B. Gerasimov, Sov. Phys. Semicond. 12, 709 (1978)
39. V.N. Brudnyi, V.A. Novikov, Sov. Phys. Semicond. 19, 460 (1985)
40. V.N. Brudnyi, M.A. Krivov, A.I. Potapov, V.I. Shakhovostov, Sov. Phys. Semicond. 16, 21 (1982)
41. W. Cleland, J.H. Crawford, Phys. Rev. 100, 1614 (1955)
42. V.N. Brudnyi, V.A. Novikov, Sov. Phys. Semicond. 16, 1211 (1983)
43. N.P. Kekelidze, G.P. Kekelidze, in: Radiation Damage and Defects in Semiconductors, Vol. 16 Inst. Phys. Conf. Series (IOP London, 1972) p. 387
44. T.V. Mashovets, R.Y. Khansevarov, Sov. Phys. Solid State 8, 1350 (1966)
45. W. Gordy, W.J.O. Thomas, J. Chem. Phys. 24, 439 (1956)
46. W. Mönch, Semiconductor Surfaces and Interfaces, 3rd edn. (Springer, Berlin, 2001)