Deposition and diffusion of a single Si adatom on H-terminated Si (1 0 0) surfaces

Semiconductor Science and Technology

Volumn 20, Issue 8, 2005, Pages 847-850

  Huang, X J ^a   Zhu, X Y ^a,b  

^a SOOCHOW UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANISOTROPY; BINDING ENERGY; CHEMICAL BONDS; COMPUTATIONAL METHODS; DEPOSITION; DIFFUSION;

ADATOM DIFFUSION; DIFFUSION BARRIERS; ENERGY CALCULATION; SINGLE ADATOM;

SEMICONDUCTING SILICON;

EID: 22844445111     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/8/038     Document Type: Article

References (19)

1. Vasek J E, Zhang Z, Salling C T and Lagally M G 1995 Phys. Rev. B 51 17207
2. Nara J, Sasaki T and Ohno T 1997 Phys. Rev. Lett. 79 4421
3. Jeong S and Oshiyama A 1997 Phys. Rev. Lett. 79 4425
4. Sakai A and Tatsumi T 1994 Appl. Phys. Lett. 64 52
5. Northrup J E 1991 Phys. Rev. B 44 1419
6. Shigemitsu M, Hiroshi I, Keiji H, Sung T L and Shogo N 1983 Phys. Rev. B 27 4110
7. Copel M and Tromp R M 1994 Phys. Rev. Lett. 72 1236
8. Jeong M S, Lee Y H and Hwang Y G 1995 Phys. Rev. B 51 17151
9. Kim E and Lee Y H 1994 Phys. Rev. B 49 1743
10. Lee S M and Lee Y H 1996 Surf. Sci. 347 329
11. Zhu X Y and Lee Y H 1999 Phys. Rev. B 59 9764
12. Huang Y and Zhu X Y 2004 Chin. Phys. 13 725
13. Goodwin L, Skinner A J and Pettifor D G 1989 Europhys. Lett. 9 701
14. Kim E, Lee Y H and Lee J M 1994 J. Phys.: Condens. Matter 6 9561
15. Fa W and Luo C L 2000 Acta Phys. Sin. 49 430 (in Chinese)
16. Zhu X Y, Lee S M, Kim J Y, Lee Y H, Chung D C and Frauenheim T 2001 Semicond. Sci. Technol. 16 R41
17. Song E G, Kim E and Lee Y H 1993 Phys. Rev. B 48 1486
18. Wang C Z, Chan C T and Ho K M 1991 Phys. Rev. Lett. 66 189
19. Takeuchi N 2003 Surf. Sci. 529 274