Quaternary AlInGaN-based photodetectors

IET Optoelectronics

Volumn 2, Issue 1, 2008, Pages 42-45

  Jhou, Y D ^a   Chang, S J ^a   Su, Y K ^a   Chen, C H ^b   Lee, H C ^a   Liu, C H ^a   Lee, Y Y ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL FILMS; GROWTH TEMPERATURE; SAPPHIRE; TWO DIMENSIONAL;

METALORGANIC CHEMICAL VAPOUR DEPOSITION; SEMICONDUCTOR PHOTODETECTORS;

PHOTODETECTORS;

EID: 39349086246     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt:20070020     Document Type: Article

References (40)

1. Nakamura, S., Mukai, T., and Senoh, M.: J. Appl. Phys., 1994, 76, p. 8189 10.1063/1.357872 0021-8979
2. Akasaki, I., and Amano, H.: Jpn. J. Appl. Phys., 1997, 36, p. 5393 10.1143/JJAP.36.5393 0021-4922
3. Schubert, E.F., and Kim, J.K.: Science, 2005, 308, p. 1274 0036-8075
4. Chang, S.J., Lai, W.C., Su, Y.K., Chen, J.F., Liu, C.H., and Liaw, U.H.: IEEE J. Sel. Top Quant. Electron., 2002, 8, p. 278
5. Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Sheu, J.K., Wen, T.C., Lai, W.C., Chen, J.F., and Tsai, J.M.: IEEE J. Sel. Top Quant. Electron., 2002, 8, p. 744
6. Wang, C.K., Chang, S.J., Su, Y.K., Chiou, Y.Z., Chen, S.C., Chang, C.S., Lin, T.K., Liu, H.L., and Tang, J.J.: IEEE Trans. Electron. Devices, 2006, 53, p. 38 10.1109/TED.2005.860780 0018-9383
7. Monroy, E., Palacios, T., Hainaut, O., Omnes, F., Calle, F., and Hochedez, J.F.: Appl. Phys. Lett., 2002, 80, p. 3198 10.1063/1.1475362 0003-6951
8. Tut, T., Gokkavas, M., Butun, B., Butun, S., Ulker, E., and Ozbay, E.: Appl. Phys. Lett., 2006, 89, p. 183524 10.1063/1.2385216 0003-6951
9. Jiang, H., and Egawa, T.: Electron. Lett., 2006, 42, p. 1120 10.1049/el:20061405 0013-5194
10. Ozbay, E., Biyikli, N., Kimukin, I., Kartaloglu, T., Tut, T., and Aytur, O.: IEEE J. Sel. Top Quant. Electron., 2004, 10, p. 742
11. McClintock, R., Yasan, A., Mayes, K., Shiell, D., Darvish, S.R., Kung, P., and Razeghi, M.: Appl. Phys. Lett., 2004, 84, p. 1248 10.1063/1.1650550 0003-6951
12. Seo, I.S., Lee, I.H., Park, Y.J., and Lee, C.R.: J. Cryst. Growth, 2003, 252, p. 51 0022-0248
13. Sandvik, P., Mi, K., Shahedipour, F., McClintock, R., Yasan, A., Kung, P., and Razeghi, M.: J. Cryst. Growth, 2001, 231, p. 366 10.1016/S0022-0248(01) 01467-1 0022-0248
14. Chang, S.J., Ko, T.K., Su, Y.K., Chiou, Y.Z., Chang, C.S., Shei, S.C., Sheu, J.K., Lai, W.C., Lin, Y.C., Chen, W.S., and Shen, C.F.: IEEE Sens. J., 2006, 6, p. 406 10.1109/JSEN.2006.870151 1530-437X
15. Kamiyama, S., Iwaya, M., Hayashi, N., Takeuchi, T., Amano, H., Akasaki, I., Watanabe, S., Kaneko, Y., and Yamada, N.: J. Cryst. Growth, 2001, 223, p. 83 0022-0248
16. Han, J., Waldrip, K.E., Lee, S.R., Figiel, J.J., Hearne, S.J., Petersen, G.A., and Myers, S.M.: Appl. Phys. Lett., 2001, 78, p. 67 0003-6951
17. Khan, M.A., Skogman, R.A., Van Hove, J.M., Olson, D.T., and Kuznia, J.N.: Appl. Phys. Lett., 1992, 60, p. 1366 0003-6951
18. Zhang, J.P., Khan, M.A., Sun, W.H., Wang, H.M., Chen, C.Q., Fareed, Q., Kuokstis, E., and Yang, J.W.: Appl. Phys. Lett., 2002, 81, p. 4392 0003-6951
19. Hirayama, H., Kinoshita, A., Yamabi, T., Enomoto, Y., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y.: Appl. Phys. Lett., 2002, 80, p. 207 0003-6951
20. Hirayama, H.: J. Appl. Phys., 2005, 97, p. 091101 10.1063/1.1899760 0021-8979
21. Lai, W.C., Chang, S.J., Yokoyam, M., Sheu, J.K., and Chen, J.F.: IEEE Photon. Technol. Lett., 2001, 13, p. 559
22. Kyono, T., Hirayama, H., Akita, K., Nakamura, T., and Ishibashi, K.: J. Appl. Phys., 2005, 98, p. 113514 10.1063/1.2134885 0021-8979
23. Li, J., Nam, K.B., Kim, K.H., Lin, J.Y., and Jiang, H.X.: Appl. Phys. Lett., 2001, 78, p. 61 0003-6951
24. Nagahama, S., Yanamoto, T., Sano, M., and Mukai, T.: Jpn. J. Appl. Phys., 2001, 40, p. L77 0021-4922
25. Nagahama, S., Yanamoto, T., Sano, M., and Mukai, T.: Jpn. J. Appl. Phys., 2002, 41, p. 5 0021-4922
26. Baek, S.H., Kim, J.O., Kwon, M.K., Park, I.K., Na, S.I., Kim, J.Y., Kim, B., and Park, S.J.: IEEE Photon. Technol. Lett., 2006, 18, p. 1276
27. Kuo, C.H., Lin, C.C., Chang, S.J., Hsu, Y.P., Tsai, J.M., Lai, W.C., and Wang, P.T.: IEEE Trans. Electron. Devices, 2005, 52, p. 2346 10.1109/TED.2005.856817 0018-9383
28. Wang, T., Liu, Y.H., Lee, Y.B., Ao, J.P., Bai, J., and Sakai, S.: Appl. Phys. Lett., 2002, 81, p. 2508 10.1063/1.1510967 0003-6951
29. Yasan, A., McClintock, R., Mayes, K., Darvish, S.R., Kung, P., and Razeghi, M.: Appl. Phys. Lett., 2002, 81, p. 801 10.1063/1.1497709 0003-6951
30. Khan, M.A., Adivarahan, V., Zhang, J.P., Chen, C.Q., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J.W., and Simin, G.: Jpn. J. Appl. Phys., 2001, 40, p. L1308 0021-4922
31. Shatalov, M., Chitnis, A., Adivarahan, V., Lunev, A., Zhang, J., Yang, J.W., Fareed, Q., Simin, G., Zakheim, A., and Khan, M.A.: Appl. Phys. Lett., 2001, 78, p. 817 0003-6951
32. Liu, Y., Jiang, H., Arulkumaran, S., Egawa, T., Zhang, B., and Ishikawa, H.: Appl. Phys. Lett., 2005, 86, p. 223510 10.1063/1.1942643 0003-6951
33. Chang, S.J., Chang, C.S., Su, Y.K., Lee, C.T., Chen, W.S., Shen, C.F., Hsu, Y.P., Shei, S.C., and Lo, H.M.: IEEE Trans. Adv. Packag., 2005, 28, p. 273 10.1109/TADVP.2005.846941 1521-3323
34. Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lin, Y.C., Shei, S.C., Lo, H.M., Lin, H.Y., and Ke, J.C.: IEEE J. Quant. Electron., 2003, 39, p. 1439 10.1109/JQE.2003.818312
35. Chang, S.J., Wu, L.W., Su, Y.K., Hsu, Y.P., Lai, W.C., Tsai, J.M., Sheu, J.K., and Lee, C.T.: IEEE Photon. Technol. Lett., 2004, 16, p. 1447 10.1109/LPT.2004.826737
36. Wu, L.W., Chang, S.J., Su, Y.K., Chuang, R.W., Hsu, Y.P., Kuo, C.H., Lai, W.C., Wen, T.C., Tsai, J.M., and Sheu, J.K.: Solid State Electron., 2003, 47, p. 2027
37. Su, Y.K., Chang, S.J., Wei, S.C., Chen, S.M., and Li, W.L.: IEEE Trans. Device Mater. Reliab., 2005, 5, p. 277 10.1109/TDMR.2005.847197 1530-4388
38. Ho, L.H., and Stringfellow, G.B.: Appl. Phys. Lett., 1996, 69, p. 2701 0003-6951
39. Schroder, D.K.: ' Semiconductor material and device characterization ', 2nd (Wiley, New York, 1998)
40. Tracy, K.M., Hartlieb, P.J., Einfeldt, S., Davis, R.F., Hurt, E.H., and Nemanich, R.J.: J. Appl. Phys., 2003, 94, p. 3939 10.1063/1.1598630 0021-8979