Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current

Electronics Letters

Volumn 42, Issue 19, 2006, Pages 1120-1122

  Jiang, H ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; DEMODULATION; ELECTRONICS ENGINEERING; PHOTODIODES; SAPPHIRE; SCHOTTKY BARRIER DIODES;

ACTIVE AREAS; DETECTIVITY; SOLAR-BLIND ALGAN SCHOTTKY PHOTODIODES; ZERO-BIAS PEAK RESPONSIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33748791471     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061405     Document Type: Article

References (7)

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