Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 51-57

  Seo, In Seok ^a   Lee, In Hwan ^a   Park, Yong Jo ^b   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials; B3. Hetero junction semiconductor devices

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

DARK CURRENTS;

ULTRAVIOLET DETECTORS;

EID: 0037401657     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02523-X     Document Type: Article

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