Effects of in composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Kyono, Takashi ^a   Hirayama, Hideki ^b   Akita, Katsushi ^a   Nakamura, Takao ^a   Ishibashi, Koji ^b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP INHOMOGENEITY; DISLOCATION DENSITIES; GROWTH TEMPERATURE; LIGHT EMITTING DIODE LED; QW EMISSION EFFICIENCY;

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 29144476568     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2134885     Document Type: Article

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