메뉴 건너뛰기




Volumn 28, Issue 2, 2005, Pages 273-277

Nitride-based flip-chip ITO LEDs

Author keywords

Flip chip; GaN; Indium tin oxide (ITO); Light emitting diode (LED)

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM NITRIDE; INTEGRATED CIRCUIT MANUFACTURE; LIGHT EMITTING DIODES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 20444384372     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2005.846941     Document Type: Article
Times cited : (85)

References (25)
  • 1
    • 0028385147 scopus 로고
    • "Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes"
    • S. Nakamura, T. Mukai, and M. Senoh, "Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1687-1689
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3
  • 2
    • 0031223973 scopus 로고    scopus 로고
    • "Crystal growth and conductivity control of group III-nitride semiconductors and their applications to short wavelength light emitters"
    • I. Akasaki and H. Amano, "Crystal growth and conductivity control of group III-nitride semiconductors and their applications to short wavelength light emitters," Jpn. J. Appl. Phys., vol. 36, pp. 5393-5408, 1997.
    • (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 5393-5408
    • Akasaki, I.1    Amano, H.2
  • 5
    • 0038443548 scopus 로고    scopus 로고
    • "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts"
    • Apr
    • S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts," IEEE Electron Device Lett., vol. 24, no. 4, pp. 212-214, Apr. 2003.
    • (2003) IEEE Electron Device Lett. , vol.24 , Issue.4 , pp. 212-214
    • Chang, S.J.1    Lee, M.L.2    Sheu, J.K.3    Lai, W.C.4    Su, Y.K.5    Chang, C.S.6    Kao, C.J.7    Chi, G.C.8    Tsai, J.M.9
  • 11
    • 0036614873 scopus 로고    scopus 로고
    • "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors"
    • A
    • Y. Z. Chiou, Y. K. Su, S. J. Chang, J. F. Chen, C. S. Chang, S. H. Liu, Y. C. Lin, and C. H. Chen, "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors," Jpn. J. Appl. Phys., pt. 1. vol. 41, no. 6A, pp. 3643-3645, Jun. 2002.
    • (2002) Jpn. J. Appl. Phys. , vol.41 , Issue.6 PART 1 , pp. 3643-3645
    • Chiou, Y.Z.1    Su, Y.K.2    Chang, S.J.3    Chen, J.F.4    Chang, C.S.5    Liu, S.H.6    Lin, Y.C.7    Chen, C.H.8
  • 15
    • 0037421402 scopus 로고    scopus 로고
    • "Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN"
    • S. Y. Kim, H. W. Jang, and J. L. Lee, "Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN," Appl. Phys. Lett., vol. 82, pp. 61-63, 2003.
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 61-63
    • Kim, S.Y.1    Jang, H.W.2    Lee, J.L.3
  • 16
    • 0038190983 scopus 로고    scopus 로고
    • "Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts"
    • May
    • S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts," IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 646-648, May 2003.
    • (2003) IEEE Photon. Technol. Lett. , vol.15 , Issue.5 , pp. 646-648
    • Pan, S.M.1    Tu, R.C.2    Fan, Y.M.3    Yeh, R.C.4    Hsu, J.T.5
  • 17
    • 0037515660 scopus 로고    scopus 로고
    • "Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts"
    • May
    • S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts," IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 649-651, May 2003.
    • (2003) IEEE Photon. Technol. Lett. , vol.15 , Issue.5 , pp. 649-651
    • Pan, S.M.1    Tu, R.C.2    Fan, Y.M.3    Yeh, R.C.4    Hsu, J.T.5
  • 20
    • 0035926908 scopus 로고    scopus 로고
    • "High-power AlGaInN flip-chip light-emitting diodes"
    • J. J. Wierer et al., "High-power AlGaInN flip-chip light-emitting diodes," Appl. Phys. Lett., vol. 78, pp. 3379-3381, 2003.
    • (2003) Appl. Phys. Lett. , vol.78 , pp. 3379-3381
    • Wierer, J.J.1
  • 21
    • 2942731841 scopus 로고    scopus 로고
    • "Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes"
    • Jun
    • J. Song, D. S. Leem, J. S. Kwak, O. H. Nam, Y. Park, and T. Y. Seong, "Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1450-1452, Jun. 2004.
    • (2004) IEEE Photon. Technol. Lett. , vol.16 , Issue.6 , pp. 1450-1452
    • Song, J.1    Leem, D.S.2    Kwak, J.S.3    Nam, O.H.4    Park, Y.5    Seong, T.Y.6
  • 23
    • 0036493264 scopus 로고    scopus 로고
    • "Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications"
    • Mar./Apr
    • M. Koike, N. Shibata, H. Kato, and Y. Takahashi, "Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 271-277, Mar./Apr. 2002.
    • (2002) IEEE J. Sel. Topics Quantum Electron. , vol.8 , Issue.2 , pp. 271-277
    • Koike, M.1    Shibata, N.2    Kato, H.3    Takahashi, Y.4
  • 24
    • 0347220994 scopus 로고    scopus 로고
    • "High output power InGaN ultraviolet light plus emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy"
    • K. Tadatomo. H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, "High output power InGaN ultraviolet light plus emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy," Phys. Stat. Sol. (A), Applied Reasearch, vol. 188, no. 1, pp. 121-125, 2001.
    • (2001) Phys. Stat. Sol. (A), Applied Reasearch , vol.188 , Issue.1 , pp. 121-125
  • 25
    • 0035874864 scopus 로고    scopus 로고
    • "High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy"
    • B
    • K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, "High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy," Jpn. J. Appl. Phys., pt. 2, vol. 40, no. 6B, pp. 583-585, 2001.
    • (2001) Jpn. J. Appl. Phys. , vol.40 , Issue.6 PART 2 , pp. 583-585
    • Tadatomo, K.1    Okagawa, H.2    Ohuchi, Y.3    Tsunekawa, T.4    Imada, Y.5    Kato, M.6    Taguchi, T.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.