-
1
-
-
0028385147
-
"Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes"
-
S. Nakamura, T. Mukai, and M. Senoh, "Candela-class high brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes," Appl. Phys. Lett., vol. 64, pp. 1687-1689, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 1687-1689
-
-
Nakamura, S.1
Mukai, T.2
Senoh, M.3
-
2
-
-
0031223973
-
"Crystal growth and conductivity control of group III-nitride semiconductors and their applications to short wavelength light emitters"
-
I. Akasaki and H. Amano, "Crystal growth and conductivity control of group III-nitride semiconductors and their applications to short wavelength light emitters," Jpn. J. Appl. Phys., vol. 36, pp. 5393-5408, 1997.
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 5393-5408
-
-
Akasaki, I.1
Amano, H.2
-
3
-
-
0036493177
-
"InGaN/GaN multiquantum well blue and green light emitting diodes"
-
Mar./Apr
-
S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.2
, pp. 278-283
-
-
Chang, S.J.1
Lai, W.C.2
Su, Y.K.3
Chen, J.F.4
Liu, C.H.5
Liaw, U.H.6
-
4
-
-
0347968279
-
"Nitride-based LEDs with p-InGaN capping layer"
-
Dec
-
S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang, and B. R. Huang, "Nitride-based LEDs with p-InGaN capping layer," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2567-2570, Dec. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.12
, pp. 2567-2570
-
-
Chang, S.J.1
Chen, C.H.2
Chang, P.C.3
Su, Y.K.4
Chen, P.C.5
Jhou, Y.D.6
Hung, H.7
Wang, C.M.8
Huang, B.R.9
-
5
-
-
0038443548
-
"GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts"
-
Apr
-
S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and ITO metal contacts," IEEE Electron Device Lett., vol. 24, no. 4, pp. 212-214, Apr. 2003.
-
(2003)
IEEE Electron Device Lett.
, vol.24
, Issue.4
, pp. 212-214
-
-
Chang, S.J.1
Lee, M.L.2
Sheu, J.K.3
Lai, W.C.4
Su, Y.K.5
Chang, C.S.6
Kao, C.J.7
Chi, G.C.8
Tsai, J.M.9
-
6
-
-
0042730096
-
0.77N/GaN MQW LEDs with a low temperature GaN cap layer"
-
0.77N/GaN MQW LEDs with a low temperature GaN cap layer," Solid-State Electron., vol. 47, pp. 2027-2030, 2003.
-
(2003)
Solid-State Electron.
, vol.47
, pp. 2027-2030
-
-
Wu, L.W.1
Chang, S.J.2
Su, Y.K.3
Chuang, R.W.4
Hsu, Y.P.5
Kuo, C.H.6
Lai, W.C.7
Wen, T.C.8
Tsai, J.M.9
Sheu, J.K.10
-
7
-
-
0034227811
-
"40% efficient thin film surface textured light emitting diodes by optimization of natural lithography"
-
Jul
-
R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kiesel, G. Borghs, G. H. Dohler, and P. Heremans, "40% efficient thin film surface textured light emitting diodes by optimization of natural lithography," IEEE Trans. Electron Devices, vol. 47, no. 7, pp. 1492-1498, Jul. 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.7
, pp. 1492-1498
-
-
Windisch, R.1
Dutta, B.2
Kuijk, M.3
Knobloch, A.4
Meinlschmidt, S.5
Schoberth, S.6
Kiesel, P.7
Borghs, G.8
Dohler, G.H.9
Heremans, P.10
-
8
-
-
0036894222
-
"Nitride-based light-emitting diodes with Ni/TO p-type ohmic contacts"
-
Dec
-
Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen, and B. R. Huang, "Nitride-based light-emitting diodes with Ni/TO p-type ohmic contacts," IEEE Photon. Technol. Lett., vol. 14, no. 12, pp. 1668-1670, Dec. 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, Issue.12
, pp. 1668-1670
-
-
Lin, Y.C.1
Chang, S.J.2
Su, Y.K.3
Tsai, T.Y.4
Chang, C.S.5
Shei, S.C.6
Hsu, S.J.7
Liu, C.H.8
Liaw, U.H.9
Chen, S.C.10
Huang, B.R.11
-
9
-
-
0043028452
-
"Nitride-based green light emitting diodes with high temperature GaN barrier layers"
-
Aug
-
L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang, J. M. Tsai, and J. K. Sheu, "Nitride-based green light emitting diodes with high temperature GaN barrier layers," IEEE Tran. Electron Devices, vol. 50, no. 8, pp. 1766-1770, Aug. 2003.
-
(2003)
IEEE Tran. Electron Devices
, vol.50
, Issue.8
, pp. 1766-1770
-
-
Wu, L.W.1
Chang, S.J.2
Su, Y.K.3
Chuang, R.W.4
Wen, T.C.5
Kuo, C.H.6
Lai, W.C.7
Chang, C.S.8
Tsai, J.M.9
Sheu, J.K.10
-
10
-
-
0041880648
-
"InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts"
-
A
-
C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hus, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen, and C. H. Liu, "InGaN/ GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts," Jpn. J. Appl. Phys., pt. 1, vol. 42, no. 6A, pp. 3324-3327, 2003.
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, Issue.6 PART 1
, pp. 3324-3327
-
-
Chang, C.S.1
Chang, S.J.2
Su, Y.K.3
Chiou, Y.Z.4
Lin, Y.C.5
Hus, Y.P.6
Shei, S.C.7
Ke, J.C.8
Lo, H.M.9
Chen, S.C.10
Liu, C.H.11
-
11
-
-
0036614873
-
"Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors"
-
A
-
Y. Z. Chiou, Y. K. Su, S. J. Chang, J. F. Chen, C. S. Chang, S. H. Liu, Y. C. Lin, and C. H. Chen, "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors," Jpn. J. Appl. Phys., pt. 1. vol. 41, no. 6A, pp. 3643-3645, Jun. 2002.
-
(2002)
Jpn. J. Appl. Phys.
, vol.41
, Issue.6 PART 1
, pp. 3643-3645
-
-
Chiou, Y.Z.1
Su, Y.K.2
Chang, S.J.3
Chen, J.F.4
Chang, C.S.5
Liu, S.H.6
Lin, Y.C.7
Chen, C.H.8
-
12
-
-
0036661965
-
"400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes"
-
Jul./Aug
-
S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai, "400 nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 744-748, Jul./Aug. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.4
, pp. 744-748
-
-
Chang, S.J.1
Kuo, C.H.2
Su, Y.K.3
Wu, L.W.4
Sheu, J.K.5
Wen, T.C.6
Lai, W.C.7
Chen, J.F.8
Tsai, J.M.9
-
13
-
-
0035475638
-
0.7N/GaN short-period superlattice tunneling contact layer"
-
Oct
-
0.7N/GaN short-period superlattice tunneling contact layer," IEEE Electron. Device Lett., vol. 22, no. 10, pp. 460-462, Oct. 2001.
-
(2001)
IEEE Electron. Device Lett.
, vol.22
, Issue.10
, pp. 460-462
-
-
Sheu, J.K.1
Tsai, J.M.2
Shei, S.C.3
Lai, W.C.4
Wen, T.C.5
Kou, C.H.6
Su, Y.K.7
Chang, S.J.8
Chi, G.C.9
-
14
-
-
4043099796
-
0.9N - ITO structure"
-
Oct
-
0.9N - ITO structure," IEEE Photon. Technol. Lett., vol. 16, no. 8, pp. 1807-1809, Oct. 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.8
, pp. 1807-1809
-
-
Chang, K.M.1
Chu, J.Y.2
Cheng, C.C.3
-
15
-
-
0037421402
-
"Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN"
-
S. Y. Kim, H. W. Jang, and J. L. Lee, "Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN," Appl. Phys. Lett., vol. 82, pp. 61-63, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 61-63
-
-
Kim, S.Y.1
Jang, H.W.2
Lee, J.L.3
-
16
-
-
0038190983
-
"Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts"
-
May
-
S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts," IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 646-648, May 2003.
-
(2003)
IEEE Photon. Technol. Lett.
, vol.15
, Issue.5
, pp. 646-648
-
-
Pan, S.M.1
Tu, R.C.2
Fan, Y.M.3
Yeh, R.C.4
Hsu, J.T.5
-
17
-
-
0037515660
-
"Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts"
-
May
-
S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts," IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 649-651, May 2003.
-
(2003)
IEEE Photon. Technol. Lett.
, vol.15
, Issue.5
, pp. 649-651
-
-
Pan, S.M.1
Tu, R.C.2
Fan, Y.M.3
Yeh, R.C.4
Hsu, J.T.5
-
18
-
-
0242364178
-
"High brightness InGaN green LEDs with an ITO on n++-SPS upper contact"
-
Nov
-
C. S Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C Ke, and J. K. Sheu, "High brightness InGaN green LEDs with an ITO on n++-SPS upper contact," IEEE Trans Electron. Dev., vol. 50, no. 11, pp. 2208-2212, Nov. 2003.
-
(2003)
IEEE Trans Electron. Dev.
, vol.50
, Issue.11
, pp. 2208-2212
-
-
Chang, C.S.1
Chang, S.J.2
Su, Y.K.3
Kuo, C.H.4
Lai, W.C.5
Lin, Y.C.6
Hsu, Y.P.7
Shei, S.C.8
Tsai, J.M.9
Lo, H.M.10
Ke, J.C.11
Sheu, J.K.12
-
19
-
-
0242696158
-
"Highly reliable nitride-based LEDs with SPS+ITO upper contacts"
-
Nov
-
S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, "Highly reliable nitride-based LEDs with SPS+ITO upper contacts," IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1439-1443, Nov. 2003.
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, Issue.11
, pp. 1439-1443
-
-
Chang, S.J.1
Chang, C.S.2
Su, Y.K.3
Chuang, R.W.4
Lin, Y.C.5
Shei, S.C.6
Lo, H.M.7
Lin, H.Y.8
Ke, J.C.9
-
20
-
-
0035926908
-
"High-power AlGaInN flip-chip light-emitting diodes"
-
J. J. Wierer et al., "High-power AlGaInN flip-chip light-emitting diodes," Appl. Phys. Lett., vol. 78, pp. 3379-3381, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.78
, pp. 3379-3381
-
-
Wierer, J.J.1
-
21
-
-
2942731841
-
"Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes"
-
Jun
-
J. Song, D. S. Leem, J. S. Kwak, O. H. Nam, Y. Park, and T. Y. Seong, "Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1450-1452, Jun. 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.6
, pp. 1450-1452
-
-
Song, J.1
Leem, D.S.2
Kwak, J.S.3
Nam, O.H.4
Park, Y.5
Seong, T.Y.6
-
22
-
-
79956037932
-
"Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm"
-
A. Chitnis, J. Sun, V. Mandavilli, R. Pachipulusu, S. Wu, M. Gaevski, V. Adivarahan, J. P. Zhang, M. A. Khan, A. Sarua, and M. Kuball, "Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm," Appl. Phys. Lett., vol. 81, no. 18, pp. 3491-3493, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.18
, pp. 3491-3493
-
-
Chitnis, A.1
Sun, J.2
Mandavilli, V.3
Pachipulusu, R.4
Wu, S.5
Gaevski, M.6
Adivarahan, V.7
Zhang, J.P.8
Khan, M.A.9
Sarua, A.10
Kuball, M.11
-
23
-
-
0036493264
-
"Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications"
-
Mar./Apr
-
M. Koike, N. Shibata, H. Kato, and Y. Takahashi, "Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 2, pp. 271-277, Mar./Apr. 2002.
-
(2002)
IEEE J. Sel. Topics Quantum Electron.
, vol.8
, Issue.2
, pp. 271-277
-
-
Koike, M.1
Shibata, N.2
Kato, H.3
Takahashi, Y.4
-
24
-
-
0347220994
-
"High output power InGaN ultraviolet light plus emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy"
-
K. Tadatomo. H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, "High output power InGaN ultraviolet light plus emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy," Phys. Stat. Sol. (A), Applied Reasearch, vol. 188, no. 1, pp. 121-125, 2001.
-
(2001)
Phys. Stat. Sol. (A), Applied Reasearch
, vol.188
, Issue.1
, pp. 121-125
-
-
-
25
-
-
0035874864
-
"High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy"
-
B
-
K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, "High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy," Jpn. J. Appl. Phys., pt. 2, vol. 40, no. 6B, pp. 583-585, 2001.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, Issue.6 PART 2
, pp. 583-585
-
-
Tadatomo, K.1
Okagawa, H.2
Ohuchi, Y.3
Tsunekawa, T.4
Imada, Y.5
Kato, M.6
Taguchi, T.7
|