Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes

IEEE Photonics Technology Letters

Volumn 18, Issue 11, 2006, Pages 1276-1278

  Baek, Sung Ho ^a   Kim, Jeom Oh ^a   Kwon, Min Ki ^a   Park, Il Kyu ^a   Na, Seok In ^a   Kim, Ja Yeon ^a   Kim, Bongjin ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NINEX Co Ltd   (South Korea)

Author keywords

Carrier confinement; GaN; Light emitting diodes (LEDs); Quaternary

Indexed keywords

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

CARRIER CONFINEMENT; HIGH RESOLUTION X-RAY DIFFRACTION MEASUREMENTS; ULTRAVIOLET LIGHT-EMITTING DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33744498375     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.875322     Document Type: Article

References (12)

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