GaN MSM UV photodetectors with titanium tungsten transparent electrodes

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 38-42

  Wang, C K ^b   Chang, S J ^b   Su, Y K ^a,b   Chiou, Y Z ^c   Chen, S C ^d   Chang, C S ^b   Lin, T K ^b   Liu, H L ^b   Tang, J J ^c  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

GaN; Metal semiconductor metal (MSM) ultraviolet (UV) photodetectors; Noise; Titanium tungsten (TiW)

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; GALLIUM NITRIDE; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SPURIOUS SIGNAL NOISE; TITANIUM COMPOUNDS;

METAL SEMICONDUCTOR METAL (MSM); METAL SEMICONDUCTOR METAL ULTRAVIOLET PHOTODETECTORS; NOISE EQUIVALENT POWER; TITANIUM TUNGSTEN;

ULTRAVIOLET DETECTORS;

EID: 33746480570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860780     Document Type: Article

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