A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining

Nanotechnology

Volumn 19, Issue 3, 2008, Pages

  Hu, F R ^a   Kanamori, Y ^a   Ochi, K ^a   Zhao, Y ^a   Wakui, M ^a   Hane, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MICROMACHINING; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON DIFFRACTION IMAGES; HEXAGONAL WURTZITE STRUCTURES; OPTICAL MEASUREMENTS; SUBWAVELENGTH GRATINGS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GALLIUM; INDIUM; NITROGEN DERIVATIVE; SILICON DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CRYSTALLIZATION; ELECTRON DIFFRACTION; FILM; GRATING; PHOTOLUMINESCENCE; PRIORITY JOURNAL; QUANTUM CHEMISTRY; ROOM TEMPERATURE; SPECTRAL SENSITIVITY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 38649097863     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/03/035305     Document Type: Article

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