High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Graham, D M ^a   Dawson, P ^a   Chabrol, G R ^a   Hylton, N P ^a   Zhu, D ^b   Kappers, M J ^b   McAleese, C ^b   Humphreys, C J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FILM GROWTH; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAVIOLET RADIATION;

INTERBARRIER THICKNESS; INTERNAL EFFICIENCY; STRUCTURAL DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847172261     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2434823     Document Type: Article

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