Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3085-3088

  Kim, D J ^a   Moon, Y T ^a   Song, K M ^a   Park, S J ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

InGaN GaN; MOCVD; MQWs; PL; TEM; XRD

Indexed keywords

DEFECTS; GALLIUM NITRIDE; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BARRIER THICKNESS; MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035328717     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3085     Document Type: Article

References (20)