SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 16, Issue 9, 2001, Pages 783-788

High-quality In0.3Ga0.7N/GaN quantum well growth and their optical and structural properties

(3) Cheong, M G a Suh, E K a Lee, H J a

a Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH RESOLUTION X RAY DIFFRACTION; STRUCTURAL PROPERTIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035443261 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/9/308 Document Type: Article

Times cited : (11)

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