Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Wang, D ^a   Jia, S ^a   Chen, K J ^a   Lau, K M ^a   Dikme, Y ^b   Van Gemmern, P ^b   Lin, Y C ^b   Kalisch, H ^b   Jansen, R H ^b   Heuken, M ^b,c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN FILMS; GROWTH PARAMETERS; PHONON-SCATTERING; SPATIAL DISTRIBUTION;

FILM GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRESS CONCENTRATION; TENSILE STRESS;

THIN FILMS;

EID: 20144365403     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856211     Document Type: Article

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