Efficient green emission from (11 2- 2) InGaNGaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Kawakami, Y ^a   Nishizuka, K ^a   Yamada, D ^a   Kaneta, A ^a   Funato, M ^a   Narukawa, Y ^b   Mukai, T ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; GALLIUM NITRIDE; MICROSTRUCTURE; NEAR FIELD SCANNING OPTICAL MICROSCOPY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS;

FIBER APERTURE; GREEN EMISSION; INTERNAL QUANTUM EFFICIENCY; MICROFACETS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547348141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748309     Document Type: Article

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