Formation of "air-gap" structure at a GaN epilayer/substrate interface by using an InN interlayer

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2826-2829

  Yamamoto, A ^a   Hamano, Y ^a   Tanikawa, T ^a   Ghosh, Bablu K ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN BUFFER LAYERS; GAN EPILAYERS; GAN SURFACES; GAN/SAPPHIRE; RAMAN SHIFT; SUBSTRATE SURFACE; SUBSTRATE TEMPERATURE; THERMAL INSTABILITIES;

ATMOSPHERIC PRESSURE; BUFFER LAYERS; CRACKS; EPITAXIAL FILMS; NITROGEN;

GALLIUM NITRIDE;

EID: 36049023474     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303424     Document Type: Conference Paper

References (3)

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