Rinse additives for line edge roughness control in 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 343-351

  Goldfarb, Dario L ^a   Burns, Sean D ^a   Burns, Ryan L ^c   Brodsky, Colin J ^b   Lawson, Margaret C ^b   Angelopoulos, Marie ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

193 nm lithography; LER; Line edge roughness; Line width roughness; LWR; Rinse additives

Indexed keywords

CRITICAL DIMENSION (CD); CRITICAL LAYER PATTERNING; LINE EDGE ROUGHNESS (LER); RINSE ADDITIVES;

ADDITIVES; ELECTRONICS INDUSTRY; GATES (TRANSISTOR); IMAGING TECHNIQUES; LITHOGRAPHY; OPTICAL DEVICES; SALTS; SURFACE ROUGHNESS;

PHOTORESISTS;

EID: 3843127413     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537723     Document Type: Conference Paper

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